Published September 1982
| Version v1
Journal article
Photoelectric phenomena in high-ohmic PbTe crystals doped with Ga
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Фотоэлектрические явления в высокоомных кристаллах PbTe, легированных Га
Publishing Information
- Journal Title
- Vestn. Mosk. Univ., Ser. 3. Fiz. Astron.
- Journal Volume
- 23
- Journal Issue
- 5
- Series
- Vestn. Mosk. Univ., Ser. 3. Fiz. Astron.
- Journal Page Range
- 115
- ISSN
- 0579-9392
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14773629
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ACTIVATION ENERGY; CARRIER LIFETIME; CRYSTAL DEFECTS; ELECTRO-OPTICAL EFFECTS; ELECTRON DENSITY; GALLIUM ADDITIONS; LEAD TELLURIDES; PHOTOCONDUCTIVITY; TEMPERATURE DEPENDENCE; VERY LOW TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY; LEAD COMPOUNDS; LIFETIME; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note. For English translation see the journal Moscow University Physics Bulletin (USA).