Published April 2005
| Version v1
Journal article
Radiative recombination of excitons in amorphous semiconductors
Creators
- 1. School of Engineering and Logistics, Faculty Technology, B-41, Charles Darwin University, Darwin, NT 0909 (Australia)
Description
A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments
Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2004.09.076;
- PII
- S0022-2313(04)00391-6;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 112
- Journal Issue
- 1-4
- Journal Page Range
- p. 40-44
- ISSN
- 0022-2313
- CODEN
- JLUMA8
Conference
- Title
- 6. international conference on excitonic processes in condensed matter
- Acronym
- EXCON '04
- Dates
- 6-9 Jul 2004
- Place
- Cracow (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37049325
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EFFECTIVE MASS; EXCITONS; PHOTOLUMINESCENCE; RECOMBINATION; SEMICONDUCTOR MATERIALS; THERMAL EQUILIBRIUM
- Descriptors DEC
- EMISSION; EQUILIBRIUM; LUMINESCENCE; MASS; MATERIALS; PHOTON EMISSION; QUASI PARTICLES
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.