Published September 1, 2020 | Version v1
Journal article

Modification of InGaAs/GaAs heterostructure density of states and optical gain using hybrid quantum well-dots

  • 1. Nanophotonics lab., Alferov University, Saint-Petersburg (Russian Federation)
  • 2. Ioffe Institute, Saint-Petersburg (Russian Federation)
  • 3. International Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, Saint-Petersburg (Russian Federation)

Description

We show that the density of states and gain spectra of InGaAs/GaAs quantum well-dot (QWD) hybrid nanostructures qualitatively differ from that of quantum wells (QWs) and quantum dots. In QWDs, the density of states does not increase to higher energies and ground-state lasing is maintained up to shorter cavities (higher output loss) as compared to QW lasers emitting in the same optical range. The QWD lasers show lower threshold current densities and better temperature stability than the QW ones. (letter)

Availability note (English)

Available from http://dx.doi.org/10.1088/1612-202X/aba0bf

Additional details

Identifiers

Publishing Information

Journal Title
Laser Physics Letters (Internet)
Journal Volume
17
Journal Issue
9
Journal Page Range
[4 p.]
ISSN
1612-202X