Published February 1989
| Version v1
Journal article
Ion mixing kinetics study by in situ resistance measurements in the Au/Si system
Creators
- 1. Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
Description
Ion beam mixing studies in the Au/poly-Si and Au/Si (100) system have been conducted by in situ resistance measurements. The relationship between resistance of the irradiated samples and the growth of an amorphous Au5Si2 layer as measured by Rutherford backscattering has been established in this system. An analytical model was employed to explain the linear relation between conductance g and square root of dose Φ1/2. This in situ technique is used to study the kinetics of ion beam mixing in the Au/Si system. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section B
- Journal Volume
- 36
- Journal Issue
- 2
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 153-156
- ISSN
- 0168-583X
- CODEN
- NIMBE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 20047208
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALLOYS; AMORPHOUS STATE; ARGON IONS; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY; GOLD; GOLD ALLOYS; ION BEAMS; ION COLLISIONS; ION IMPLANTATION; KRYPTON IONS; RADIATION DOSES; SILICON; SILICON ALLOYS; XENON IONS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; COLLISIONS; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; ELEMENTS; IONS; METALS; PHYSICAL PROPERTIES; SEMIMETALS; SPECTROSCOPY; TRANSITION ELEMENTS
Optional Information
- Contract/Grant/Project number
- Contract DMR-86-18761