Published 1993 | Version v1
Journal article Metadata-only

Study on defects in electron irradiated Si by the capacitive spectroscopy and positron annihilation methods

Creators

  • 1. AN SSSR, Moscow (Russian Federation). Inst. Khimicheskoj Fiziki

Description

Measurements of spectra in deep level nonstationary spectroscopy and positron olifetime in silicon samples of KEhF-type irradiated by fast electrons in 1014-1018 cm-2 dose range were conducted. Dose dependences of A-center and divacancy concentrations were revealed in this range. It was established that divacancies were deep traps for positrons and capture cross section changed sharply in the region up to 1017 cm-2. This change was related with transition of divacancies from negatively charged to neutral state, condition by radiation compensation of samples

Additional details

Additional titles

Original title (Russian)
Исследование дефектов в электронно-облученном кремнии методами емкостной спектроскопии и аннигитляции позитронов

Publishing Information

Journal Title
Khimicheskaya Fizika
Journal Volume
12
Journal Issue
11
Journal Page Range
p. 1512-1518.
ISSN
0207-401X
CODEN
KHFID9

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26014004
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
A CENTERS; ANNIHILATION; ELECTRON BEAMS; FERMI LEVEL; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; POSITRONS; RADIATION DOSES; SILICON
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; ENERGY RANGE; FERMIONS; INTERACTIONS; LEPTON BEAMS; LEPTONS; MATTER; MEV RANGE; PARTICLE BEAMS; PARTICLE INTERACTIONS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; VACANCIES