Published December 1985
| Version v1
Journal article
Evidence of VLS growth in CdTe film preparation by NH4Cl closed-tube CVD
- 1. Parma Univ. (Italy). Ist. di Fisica
- 2. Bari Univ. (Italy). Ist. di Fisica
- 3. Lecce Univ. (Italy). Ist. di Fisica
Description
By thermodynamical calculations of the vapour phase composition expected to occur in the closed - tube CVD of CdTe films on CdTe substrates, it is shown that a VLS growth mechanism should be active in the growth process when use is made of the thermal decomposition of NH4Cl for producing the proper amount of HCl as a transport agent. Responsible of this VLS mechanism is the liquid tellurium, which is always present when the NH4Cl concentration reaches values sufficiently high for the epitaxial deposition of CdTe films. (author)
Additional details
Publishing Information
- Journal Title
- Cryst. Res. Technol.
- Journal Volume
- 20
- Journal Issue
- 12
- Series
- Cryst. Res. Technol.
- Journal Page Range
- 1595-1601
- ISSN
- 0232-1300
- CODEN
- CRTED
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17046816
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMMONIUM CHLORIDES; CADMIUM TELLURIDES; CHEMICAL VAPOR DEPOSITION; EPITAXY; FILMS; HIGH TEMPERATURE; MASS TRANSFER; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE; THERMODYNAMICS; VAPOR PRESSURE
- Descriptors DEC
- AMMONIUM COMPOUNDS; AMMONIUM HALIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; CHLORIDES; CHLORINE COMPOUNDS; DEPOSITION; HALIDES; HALOGEN COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES