Effect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method
- 1. Department of Materials Science and Metallurgy, Kyungpook National University, Daegu 702-701 (Korea, Republic of)
- 2. Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
- 3. Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
Description
Ti/Ge2Sb2Te5/Ti thin films deposited by a sputtering method on SiO2/Si substrates were annealed at 400 deg. C in N2 atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/Ge2Sb2Te5/Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge2Sb2Te5 layers was unstable and Ti atoms were incorporated into the Ge2Sb2Te5 thin film upon annealing. The Te and Sb atoms of the Ge2Sb2Te5 layer diffused into the Ti layer. The intermixing layers between the Ge2Sb2Te5 layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge2Sb2Te5/Ti systems can be degraded by the postgrowth thermal annealing
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2006.08.038;
- PII
- S0169-4332(06)01194-9;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 253
- Journal Issue
- 8
- Journal Page Range
- p. 4041-4044
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39003358
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ANTIMONY COMPOUNDS; ATMOSPHERES; AUGER ELECTRON SPECTROSCOPY; DIFFUSION; GERMANIUM COMPOUNDS; INTERFACES; LAYERS; MICROSTRUCTURE; NITROGEN; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; METALS; MICROSCOPY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.