Electrodynamic model of the field effect transistor application for THz/subTHz radiation detection: Subthreshold and above threshold operation

Developed in this work is an electrodynamic model of field effect transistor (FET) application for THz/subTHz radiation detection. It is based on solution of the Maxwell equations in the gate dielectric, expression for current in the channel, which takes into account both the drift and diffusion current components, and the equation of current continuity. For the regimes under and above threshold at the strong inversion the response voltage, responsivity, wave impedance, power of ohmic loss in the gate and channel have been found, and the electrical noise equivalent power (ENEP) has been estimated. The responsivity is orders of magnitude higher and ENEP under threshold is orders of magnitude less than these values above threshold. Under the threshold, the electromagnetic field in the gate oxide is identical to field of the plane waves in free-space. At the same time, for strong inversion the charging of the gate capacitance through the resistance of channel determines the electric field in oxide.