Published July 1986
| Version v1
Report
Restricted
New detector concepts
Creators
- 1. Messerschmitt-Boelkow-Blohm G.m.b.H., Muenchen (Germany, F.R.)
- 2. Technische Univ. Muenchen (Germany, F.R.). Fakultaet fuer Physik
Description
On the basis of the semiconductor drift chamber many new detectors are proposed, which enable the determination of energy, energy loss, position and penetration depth of radiation. A novel integrated transistor-detector configuration allows non destructive repeated readout and amplification of the signal. The concept may be used for the construction of one or two-dimensional PIXEL arrays. (orig.)
Availability note (English)
MF available from INIS under the Report Number.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 39 p.
- Report number
- MPI-PAE/Exp.El.--164
Conference
- Title
- New developments in radiation detectors.
- Acronym
- 4. European symposium on semiconductor detectors
- Dates
- 3-5 Mar 1986.
- Place
- Muenchen (Germany, F.R.).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 17089809
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE-COUPLED DEVICES; COUNTING CIRCUITS; ENERGY LOSSES; INTEGRATED CIRCUITS; MOS TRANSISTORS; MOSFET; POSITION SENSITIVE DETECTORS; PULSE AMPLIFIERS; READOUT SYSTEMS; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- AMPLIFIERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; FIELD EFFECT TRANSISTORS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS