Published May 25, 2003 | Version v1
Journal article

The influence of doping style on the grain growth of BaTiO3 ceramics

Description

Decrease the sintering temperature and doping with multiple functional impurities are necessary to develop the new ceramic electronic components. In this study, we used CdO as a dopant to lower sintering temperature of BaTiO3 with two doping styles: one is synthesis CdO into BaTiO3 to form compound as basic powder, another is adding CdO to the basic powder BaTiO3 before sintering as sintering aid. The different doping style resulted in very different effects. The grain size of the ceramics was controlled efficiently and the sintering was promoted greatly by the first doping style. On the contrary, the ceramic grain is much bigger and the sintering was not promoted efficiently by another doping style. Therefore, the style of doping is very important to the graingrowth controlling. The mechanism of these differences is also discussed

Additional details

Identifiers

DOI
10.1016/S0921-5107(02)00536-6;
arXiv
arXiv:hep-th/0102159v2;
PII
S0921510702005366;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
99
Journal Issue
1-3
Journal Page Range
p. 214-216
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
8. IUMRS international conference on electronic materials
Acronym
IUMRS-ICEM2002 - Symposium N
Dates
10-14 Jun 2002
Place
Xi'an (China)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37114164
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BARIUM COMPOUNDS; CADMIUM OXIDES; CERAMICS; GRAIN GROWTH; GRAIN SIZE; IMPURITIES; POWDERS; SINTERING; SYNTHESIS; TITANATES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; FABRICATION; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; SIZE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.