Published April 4, 2005 | Version v1
Journal article Metadata-only

Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

Creators

  • 1. Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350 (Korea, Republic of)
  • 2. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

Description

The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by SiH4+N2 and SiH4+NH3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by SiH4+NH3 plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by SiH4+N2 plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of SiH4+NH3 plasma, due to the hydrogen passivation of the defects in the silicon nitride films by NH3 during the growth of the Si QDs

Additional details

Identifiers

DOI
10.1063/1.1894595;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
86
Journal Issue
14
Journal Page Range
p. 143107-143107.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36080408
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMMONIA; CAPACITANCE; CRYSTAL GROWTH; DEPOSITION; ELECTRIC POTENTIAL; HYDROGEN; PASSIVATION; PLASMA; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILANES; SILICON; SILICON NITRIDES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS

Optional Information

Notes
(c) 2005 American Institute of Physics