Published 2001 | Version v1
Miscellaneous Metadata-only

X-ray diffraction study on ELOG (epitaxial lateral overgrowth) GaN layers

Creators

  • 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 2. Centre de Recherche sur l'heteroepitaxie et ses Applications, CNRS, Valbonne (France)
  • 3. High Pressure Center Unipress, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of 3. International Conference Novel Applications of Wide Bandgap Layers

Additional details

Publishing Information

Publisher
Oficyna Wydawnicza Politechniki Warszawskiej
ISBN
0-7803-7136-4
Imprint Title
Abstracts of 3. International Conference Novel Applications of Wide Bandgap Layers
Imprint Pagination
207 p.
Journal Page Range
p. 105-106

Conference

Title
Novel Applications of Wide Bandgap Layers
Acronym
3. International Conference
Dates
26-30 Jun 2001
Place
Zakopane (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33033779
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; DISLOCATIONS; EPITAXY; GALLIUM NITRIDES; LATTICE PARAMETERS; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; STRAINS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; COHERENT SCATTERING; CORUNDUM; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; FILMS; GALLIUM COMPOUNDS; LINE DEFECTS; MATERIALS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDE MINERALS; PNICTIDES; SCATTERING; SILICON COMPOUNDS; SURFACE COATING

Optional Information

Notes
1 ref., 2 figs