Defects in silicon near the Si-SiO2 interface produced by Si+ ions implantation

The influence of cation impurities on radiation-induced processes in alkali halides is critically reviewed. A number of different effects are considered. First, changes in the charge location in the lattice and state of aggregation of the impurity brought about by irradiation are discussed. Next, the available information on the structure and mechanisms of formation of defect centres (Fsub(A), Fsub(Z) and V) associated to the impurities are analyzed. Finally, the role of impurities on the production of intrinsic F and F2 color centers is reviewed. Here three temperature ranges (low, medium and high) are separately considered. Particular attention has been paid to the effect of impurities on the primary process of defect creation, as revealed by fast pulse irradiation experiments. 254 references. (author)