Evaluation on the electrochemically deposited alkoxy thiourea as liquid crystalline semiconductor film
- 1. Faculty of Engineering Technology, Universiti Malaysia Perlis, Level 1, Block S2, UniCITI Alam Campus, Sungai Chuchuh, Padang Besar 02100, Perlis (Malaysia)
- 2. School of Fundamental Science, Universiti Malaysia Terengganu, 21030 Kuala Terengganu, Terengganu (Malaysia)
Description
Highlights: • An alkoxy substituted thiourea was prepared and characterised via spectroscopic and DFT calculations. • This new class of thiourea adopts D-π-A substructure within its molecular framework. • The thiourea was electrochemically deposited on ITO substrate. • Surprisingly, it possess liquid crystalline properties. • The fabricated film exhibits good electrical performance up to 0.2170 S cm−1 under maximum light intensity of 100 W m−2. - Abstract: A new class of liquid crystalline film of alkoxy thiourea which was successfully deposited on indium tin oxide (ITO) coated substrate via electrochemical deposition method. The relationship between liquid crystal molecular structure, phase transition temperature and electrical performance was evaluated. The mesomorphic properties were identified via polarized optic microscopy (POM) which displayed cholesteric phase and their corresponding transition enthalpies were respectively recorded at 20.25 kJ mol−1. The findings from the conductivity analysis revealed that the fabricated film exhibits good electrical performance with an increasing conductivity up to 0.2170 S cm−1 under maximum light intensity of 100 W m−2. Therefore, this proposed type of molecular framework has given an ideal indication to act as semiconductor materials and has opened wide potential for application in organic electronic devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2017.02.120Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2017.02.120;
- PII
- S0169-4332(17)30483-X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 424
- Journal Issue
- Part 1
- Journal Page Range
- p. 45-51
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 7. international conference on advanced nanomaterials; 2. international conference on graphene technology; 1. international conference on spintronics materials
- Acronym
- ANM2016
- Dates
- 25-27 Jul 2016
- Place
- Aveiro (Portugal)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49071507
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DENSITY FUNCTIONAL METHOD; DEPOSITS; ELECTROCHEMISTRY; ELECTRODEPOSITION; ELECTRONIC EQUIPMENT; ENTHALPY; FILMS; INDIUM OXIDES; LIQUID CRYSTALS; MOLECULAR STRUCTURE; OPTICAL MICROSCOPY; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIOUREA; TIN OXIDES; TRANSITION TEMPERATURE
- Descriptors DEC
- ANTITHYROID DRUGS; CALCULATION METHODS; CARBONIC ACID DERIVATIVES; CHALCOGENIDES; CHEMISTRY; CRYSTALS; DEPOSITION; DRUGS; ELECTROLYSIS; EQUIPMENT; FLUIDS; INDIUM COMPOUNDS; LIQUIDS; LYSIS; MATERIALS; MICROSCOPY; ORGANIC COMPOUNDS; ORGANIC SULFUR COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SURFACE COATING; THERMODYNAMIC PROPERTIES; THIOUREAS; TIN COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.