Published May 31, 2013
| Version v1
Journal article
High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides
Creators
- 1. Open Joint-Stock Company 'M.F. Stel'makh Polyus Research and Development Institute', Moscow (Russian Federation)
Description
The power and spectral characteristics of pulsed laser diode arrays operating in the spectral range of 850–870 nm and based on heterostructures of two different types (with narrow and wide waveguides) are studied. It is found that the power—current characteristics of the laser arrays of both types are linear within the pump current range of 10–50 A and that the steepness of these characteristics decreases at currents exceeding 80 A. The decrease in the slope efficiency is more noticeable for laser arrays based on heterostructures with wide waveguides. (semiconductor lasers. physics and technology)
Availability note (English)
Available from http://dx.doi.org/10.1070/QE2013v043n05ABEH015156Additional details
Identifiers
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 43
- Journal Issue
- 5
- Journal Page Range
- p. 407-409
- ISSN
- 1063-7818
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44117535
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CURRENTS; EFFICIENCY; OPTICAL PUMPING; PULSES; SEMICONDUCTOR LASERS; WAVEGUIDES
- Descriptors DEC
- LASERS; PUMPING; SEMICONDUCTOR DEVICES; SOLID STATE LASERS