Published May 31, 2013 | Version v1
Journal article

High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides

  • 1. Open Joint-Stock Company 'M.F. Stel'makh Polyus Research and Development Institute', Moscow (Russian Federation)

Description

The power and spectral characteristics of pulsed laser diode arrays operating in the spectral range of 850–870 nm and based on heterostructures of two different types (with narrow and wide waveguides) are studied. It is found that the power—current characteristics of the laser arrays of both types are linear within the pump current range of 10–50 A and that the steepness of these characteristics decreases at currents exceeding 80 A. The decrease in the slope efficiency is more noticeable for laser arrays based on heterostructures with wide waveguides. (semiconductor lasers. physics and technology)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE2013v043n05ABEH015156

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
43
Journal Issue
5
Journal Page Range
p. 407-409
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44117535
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CURRENTS; EFFICIENCY; OPTICAL PUMPING; PULSES; SEMICONDUCTOR LASERS; WAVEGUIDES
Descriptors DEC
LASERS; PUMPING; SEMICONDUCTOR DEVICES; SOLID STATE LASERS