Published 2003 | Version v1
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Energy dependence of the total reaction cross section of silicon induced by 4He ions

Creators

  • 1. Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Dubna (Russian Federation)

Description

The energy dependence of the total reaction cross section for 4He on silicon has been directly measured by the transmission method at the energies E<25 MeV/u. The energy dependence of the semimicroscopical potential parameters has been determined from the measured σR values. (author)

Availability note (English)

Available from INIS in electronic form

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Additional details

Additional titles

Original title (Russian)
Энергетическая зависимост' полного сечения реакции ионов

Publishing Information

Imprint Pagination
11 p.
Report number
JINR-R--15-2003-175

INIS

Country of Publication
Joint Institute for Nuclear Research (JINR)
Country of Input or Organization
Joint Institute for Nuclear Research (JINR)
INIS RN
35055731
Subject category
S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ALPHA REACTIONS; CORRECTIONS; DATA ANALYSIS; ELASTIC SCATTERING; ENERGY DEPENDENCE; EXCITATION FUNCTIONS; EXPERIMENTAL DATA; MEV RANGE 10-100; OPTICAL MODELS; SILICON 28 TARGET; TOTAL CROSS SECTIONS
Descriptors DEC
CHARGED-PARTICLE REACTIONS; CROSS SECTIONS; DATA; DIFFERENTIAL CROSS SECTIONS; ENERGY RANGE; FUNCTIONS; INFORMATION; MATHEMATICAL MODELS; MEV RANGE; NUCLEAR REACTIONS; NUMERICAL DATA; SCATTERING; TARGETS

Optional Information

Notes
13 refs., 6 figs., 2 tabs. Submitted to the journal, Yadernaya Fizika