Published May 15, 1980
| Version v1
Journal article
Electrochemical light-emitting diodes
Description
Luminescence has been observed at a p-GaP/electrolyte interface in several different electrolytes. A new mechanism, direct injection of ions into the semiconductor surface, is shown to be responsible for the luminescence. Experimental results for the luminescence spectral response, current dependence, time dependence, and ion dependence will be presented. Elastic recoil detection experiments have directly observed the injected ions
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 36
- Journal Issue
- 10
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 845-847
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11551493
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- DATA; ELASTIC SCATTERING; ELECTROCHEMISTRY; ELECTROLYTES; GALLIUM PHOSPHIDES; INTERFACES; IONS; LIGHT EMITTING DIODES; LUMINESCENCE; MATHEMATICAL MODELS; P-TYPE CONDUCTORS; RECOILS; RESPONSE FUNCTIONS; SPECTRA; SURFACES; TIME DEPENDENCE; ZINC
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; FUNCTIONS; GALLIUM COMPOUNDS; INFORMATION; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS