Development of X-ray detector based on phototransistor

X-ray interaction with matter can produce phenomenon of fluorescence that emits visible light. This phenomenon has been exploited to design an X-ray detector based on photo transistor by attaching a screen ZnS(Ag) on the surface of the photo transistor which is arranged in a Darlington circuit. Response of detector was done by collimating of X-rays beam from the X-ray generator tube Philips 2000 watts, 60 kV type PW 2215/20 NR 780 026 and measure the detector output voltage (V_out). Varying the current by 5, 10, 15, 20, 25, 30, 35 and 40 mA in the X-ray panel. The experimental results showed that the Darlington circuit can be applied to design the detector of X-ray based on phototransistor. The results show that there is a linear relationship between the change in the intensity of X-ray detectors with voltage output phototransistor when it was closed with fluorescence materials ZnS(Ag), the linearity coefficient was R² = 0.99. Sensitivity of detector was obtained to be 3.7 x 10^-2 mV per cpm. (author)