Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2
Creators
- 1. National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States)
- 2. Department of Mechanical Engineering, Columbia University, New York, NY 10027 (United States)
- 3. Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)
- 4. Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627 (United States)
- 5. School of Physics, Georgia Institute of Technology, Atlanta, GA 30332 (United States)
Description
Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D semiconductors feature two fundamental intravalley excitons species–optically accessible 'bright' excitons with anti-parallel spins and optically inactive 'dark' excitons with parallel spins. For applications exploiting radiative recombination of bright excitons or long lifetime dark excitons, it is essential to understand the radiative character of the exciton ground state and establish the energy separation between the lowest energy bright and dark excitons. Here, we report a direct spectroscopic measure of dark excitons in monolayer MoSe2 encapsulated in hexagonal boron nitride. By applying strong in-plane magnetic field, we induce mixing and splitting of bright and dark exciton branches, which enables an accurate spectroscopic determination of their energies. We confirm the bright character of the exciton ground state separated by a 1.5 meV gap from the higher energy dark exciton state, much smaller compared to the previous theoretical expectations. These findings provide critical information for further improvement of the accurate theoretical description of TMDCs electronic structure. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/ab5614Additional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 7
- Journal Issue
- 1
- Journal Page Range
- [7 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52060727
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BORON NITRIDES; ELECTRONIC STRUCTURE; GROUND STATES; MAGNETIC FIELDS; MIXING; MOLYBDENUM SELENIDES; RECOMBINATION; SEMICONDUCTOR MATERIALS; SPIN; TRANSITION ELEMENTS
- Descriptors DEC
- ANGULAR MOMENTUM; BORON COMPOUNDS; CHALCOGENIDES; ELEMENTS; ENERGY LEVELS; MATERIALS; METALS; MOLYBDENUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PARTICLE PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS