Mechanical properties of a 20 vol % SiC whisker-reinforced, yttria-stabilized, tetragonal zirconia composite at elevated temperatures
- 1. Lawrence Livermore National Laboratory, P.O. Box 808, L-350, Livermore, California 94551-9900 (United States)
- 2. Central Engineering Laboratories, Nissan Motor Co., Ltd., Yokosuka 237 (Japan)
Description
The high-temperature deformation behavior of a SiC whisker-reinforced, yttria-stabilized, tetragonal zirconia polycrystalline composite containing 20 vol. % SiC whiskers (SiC/Y-TZP) has been investigated. Tensile tests were performed in vacuum at temperatures from 1450 degree C to 1650 degree C and at strain rates from 10-3 to 10-5 s-1. The material exhibits useful high-temperature engineering properties (e.g., ∼100 MPa and 16% elongation at T=1550 degree C and at a strain rate of ∼10-4 s-1). The stress exponent was determined to be n∼2. Scanning electron microscopy was used to characterize the grain size and morphology of the composites, both before and after deformation. The grain size in the composite was initially fine, but coarsened at the test temperatures; both dynamic and static grain growth were observed. The morphology of ceramic reinforcements appears to affect strongly the plastic deformation properties of Y-TZP. A comparison is made between the properties of monolithic Y-TZP, 20 wt. % Al2O3 particulate-reinforced Y-TZP (Al2O3/Y-TZP), and SiC/Y-TZP composites
Additional details
Publishing Information
- Journal Title
- Journal of Materials Research
- Journal Volume
- 10
- Journal Issue
- 1
- Journal Page Range
- p. 113-118.
- ISSN
- 0884-2914
- CODEN
- JMREEE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26036751
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPOSITE MATERIALS; GRAIN SIZE; MECHANICAL PROPERTIES; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; TEMPERATURE RANGE 1000-4000 K; TENSILE PROPERTIES; TETRAGONAL LATTICES; WHISKERS; YTTRIUM OXIDES; ZIRCONIUM OXIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; ELECTRON MICROSCOPY; MATERIALS; MICROSCOPY; MICROSTRUCTURE; MONOCRYSTALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SIZE; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS; ZIRCONIUM COMPOUNDS