Published September 2019 | Version v1
Journal article Metadata-only

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

Creators

  • 1. Moscow State University (Russian Federation)
  • 2. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
  • 3. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)

Description

The photoconductivity spectra of epitaxial CdHgTe films are investigated by Fourier-transform spectroscopy at various temperatures. Features associated with both the interband absorption and ionization of impurity/defect states are found in the spectra. Their evolution with temperature is traced. The temperatures of "vanishing" of the impurity features are determined, which makes it possible to assess the acceptor concentration in the structures under study using the electroneutrality equation.

Additional details

Identifiers

DOI
10.1134/S1063782619090240;

Publishing Information

Journal Title
Semiconductors (Woodbury, N.Y., Print)
Journal Volume
53
Journal Issue
9
Journal Page Range
p. 1266-1271
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51109055
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION; CADMIUM TELLURIDES; DEFECTS; EPITAXY; FOURIER TRANSFORM SPECTROMETERS; IMPURITIES; IONIZATION; MERCURY TELLURIDES; PHOTOCONDUCTIVITY; SPECTRA; THIN FILMS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; MEASURING INSTRUMENTS; MERCURY COMPOUNDS; PHYSICAL PROPERTIES; SORPTION; SPECTROMETERS; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Copyright
Copyright (c) 2019 Pleiades Publishing, Ltd.