Published August 1, 2000 | Version v1
Report

New synchrotron-radiation based technique to study localized defects in silicon: 'EBIC' with X-ray excitation

Description

no abstract available

Availability note (English)

Available from www.als.lbl.gov

Additional details

Publishing Information

Imprint Pagination
[vp.]
Report number
LBNL/ALS--43453

Conference

Title
10. Workshop on Crystalline Silicon Solar Cell Materials and Processes
Dates
14-16 Aug 2000
Place
Copper Mountain, CO (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
33061273
Subject category
S43: PARTICLE ACCELERATORS; S14: SOLAR ENERGY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
ADVANCED LIGHT SOURCE; DEFECTS; EXCITATION; SILICON; SILICON SOLAR CELLS; SYNCHROTRON RADIATION
Descriptors DEC
BREMSSTRAHLUNG; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATION SOURCES; RADIATIONS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; STORAGE RINGS; SYNCHROTRON RADIATION SOURCES

Optional Information

Contract/Grant/Project number
AC03-76SF00098
Funding organization
US Department of Energy (United States)