Published August 28, 2020 | Version v1
Journal article

Growth mechanism for nanotips in high electric fields

  • 1. Helsinki Institute of Physics and Department of Physics, P.O. Box 43, (Pehr Kalms gata 2), FI-00014, University of Helsinki, Helsinki (Finland)
  • 2. Institute of Technology, University of Tartu, Nooruse 1, 50411 Tartu (Estonia)

Description

In this work we show using atomistic simulations that the biased diffusion in high electric field gradients creates a mechanism whereby nanotips may start growing from small surface asperities. It has long been known that atoms on a metallic surface have biased diffusion if electric fields are applied and that microscopic tips may be sharpened using fields, but the exact mechanisms have not been well understood. Our Kinetic Monte Carlo simulation model uses a recently developed theory for how the migration barriers are affected by the presence of an electric field. All parameters of the model are physically motivated and no fitting parameters are used. The model has been validated by reproducing characteristic faceting patterns of tungsten surfaces that have in previous experiments been observed to only appear in the presence of strong electric fields. The growth effect is found to be enhanced by increasing fields and temperatures. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/ab9327

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
31
Journal Issue
35
Journal Page Range
[13 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53013255
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
COMPUTERIZED SIMULATION; DIFFUSION BARRIERS; ELECTRIC FIELDS; KINETICS; MONTE CARLO METHOD; SURFACES; TUNGSTEN
Descriptors DEC
CALCULATION METHODS; ELEMENTS; METALS; REFRACTORY METALS; SIMULATION; TRANSITION ELEMENTS