Published June 12, 2006
| Version v1
Journal article
Laser-induced shock wave stimulated doping of CdTe crystals
- 1. Aichi University of Technology, 50-2 Manori, Nishihazama-cho, Gamagouri, Aichi 433-0047 (Japan)
- 2. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011 (Japan)
Description
Action of a laser-induced plane shock wave has been considered as the mechanism of doping of CdTe surface region with In. CdTe crystals coated with a relatively thick In film were subjected to irradiation with KrF excimer laser pulses. The In film was not completely evaporated under irradiation and it served further as an electrode in the fabrication of nuclear radiation detectors. Dopant atoms, implicated by laser-induced stress and shock waves, penetrated into CdTe. An In-enriched region was formed and a built-in p-n junction arose at the depth where a stress wave was converted to a shock wave
Additional details
Identifiers
- DOI
- 10.1063/1.2213511;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 88
- Journal Issue
- 24
- Journal Page Range
- p. 242111-242111.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37083699
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM TELLURIDES; CRYSTALS; ELECTRODES; EVAPORATION; FABRICATION; INDIUM; IRRADIATION; KRYPTON FLUORIDE LASERS; LASER MATERIALS; P-N JUNCTIONS; PULSES; RADIATION DETECTORS; SEMICONDUCTOR MATERIALS; SHOCK WAVES; STRESSES; THIN FILMS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; EXCIMER LASERS; FILMS; GAS LASERS; LASERS; MATERIALS; MEASURING INSTRUMENTS; METALS; PHASE TRANSFORMATIONS; SEMICONDUCTOR JUNCTIONS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- (c) 2006 American Institute of Physics