Published June 12, 2006 | Version v1
Journal article

Laser-induced shock wave stimulated doping of CdTe crystals

  • 1. Aichi University of Technology, 50-2 Manori, Nishihazama-cho, Gamagouri, Aichi 433-0047 (Japan)
  • 2. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011 (Japan)

Description

Action of a laser-induced plane shock wave has been considered as the mechanism of doping of CdTe surface region with In. CdTe crystals coated with a relatively thick In film were subjected to irradiation with KrF excimer laser pulses. The In film was not completely evaporated under irradiation and it served further as an electrode in the fabrication of nuclear radiation detectors. Dopant atoms, implicated by laser-induced stress and shock waves, penetrated into CdTe. An In-enriched region was formed and a built-in p-n junction arose at the depth where a stress wave was converted to a shock wave

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
88
Journal Issue
24
Journal Page Range
p. 242111-242111.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2006 American Institute of Physics