Published January 3, 2006 | Version v1
Journal article

Effect of the target power density on the synthesis and physical properties of sputtered nc-C films

  • 1. Center for Advanced Plasma Surface Technology (CAPST), Sung Kyun Kwan University, 300 Chunchun-Dong, Jangan Gu, Suwon 440-746 (Korea, Republic of)
  • 2. Korea Advanced Institute of Science and Technology (KAIST), Department of Materials Science and Engineering, 373-1, Kusong-dong, Yusong-gu, Taejon (Korea, Republic of)
  • 3. Institute for Problems of Materials Science of Academy of Sciences of Ukraine, Kiev (Ukraine)

Description

Hydrogen-free nanostructured carbon (nc-C) films were synthesized at various graphite target power densities using a closed field unbalanced magnetron sputtering system (CFUBM). The power density of each graphite target was varied from 10 to 30 W/cm2 in Ar gas atmosphere with a fixed pressure of 0.4 Pa and a substrate bias voltage of-200 V. The aim of this study was to determine the relationship between the microstructure and physical properties of nc-C films as a function of the target power density. The film structures were examined by Raman spectroscopy, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The physical properties of the nc-C films were evaluated using a nano-indentation tester, a 4-point probe and a residual stress tester. The number of graphitic nano-cluster increased with increasing target power density and a good conductive nanostructured carbon film was obtained. The nc-C film deposited at a target power density of 30 W/cm2 exhibited the minimum electrical resistivity

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.07.170;
PII
S0040-6090(05)01037-0;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
494
Journal Issue
1-2
Journal Page Range
p. 123-127
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
International conference on metallurgical coatings and thin films
Acronym
ICMCTF 2005
Dates
2-6 May 2005
Place
San Diego, CA (United States)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.