Effect of the target power density on the synthesis and physical properties of sputtered nc-C films
Creators
- 1. Center for Advanced Plasma Surface Technology (CAPST), Sung Kyun Kwan University, 300 Chunchun-Dong, Jangan Gu, Suwon 440-746 (Korea, Republic of)
- 2. Korea Advanced Institute of Science and Technology (KAIST), Department of Materials Science and Engineering, 373-1, Kusong-dong, Yusong-gu, Taejon (Korea, Republic of)
- 3. Institute for Problems of Materials Science of Academy of Sciences of Ukraine, Kiev (Ukraine)
Description
Hydrogen-free nanostructured carbon (nc-C) films were synthesized at various graphite target power densities using a closed field unbalanced magnetron sputtering system (CFUBM). The power density of each graphite target was varied from 10 to 30 W/cm2 in Ar gas atmosphere with a fixed pressure of 0.4 Pa and a substrate bias voltage of-200 V. The aim of this study was to determine the relationship between the microstructure and physical properties of nc-C films as a function of the target power density. The film structures were examined by Raman spectroscopy, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The physical properties of the nc-C films were evaluated using a nano-indentation tester, a 4-point probe and a residual stress tester. The number of graphitic nano-cluster increased with increasing target power density and a good conductive nanostructured carbon film was obtained. The nc-C film deposited at a target power density of 30 W/cm2 exhibited the minimum electrical resistivity
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.07.170;
- PII
- S0040-6090(05)01037-0;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 494
- Journal Issue
- 1-2
- Journal Page Range
- p. 123-127
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- International conference on metallurgical coatings and thin films
- Acronym
- ICMCTF 2005
- Dates
- 2-6 May 2005
- Place
- San Diego, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37109755
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; FILMS; GRAPHITE; MAGNETRONS; MICROSTRUCTURE; NANOSTRUCTURES; POWER DENSITY; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SYNTHESIS; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CARBON; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; LASER SPECTROSCOPY; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MINERALS; NONMETALS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SPECTROSCOPY; STRESSES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.