Published 1985 | Version v1
Journal article Metadata-only

Examination of rapid thermal annealing process after ion implantation

Creators

  • 1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.

Description

no abstract available

Additional details

Publishing Information

Journal Title
Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku
Journal Issue
suppl.4
Series
Hosei Daigaku Ion Bimu Kagaku Kenkyusho Hokoku.
ISSN
0286-0201
CODEN
HDIHD

Conference

Title
3. symposium on ion beam technology, Hosei University. Ion beam analysis.
Dates
7-8 Dec 1984.
Place
Koganei, Tokyo (Japan).

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
17018018
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data, No Abstract
Descriptors DEI
ACTIVATION ENERGY; ANNEALING; ARSENIC IONS; BORON IONS; DEPTH; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; FILMS; ION IMPLANTATION; MOS TRANSISTORS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DEPENDENCE; TIME DEPENDENCE; TUNGSTEN SILICIDES
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; DATA; DIMENSIONS; ELECTRICAL PROPERTIES; ENERGY; HEAT TREATMENTS; INFORMATION; IONS; NUMERICAL DATA; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICIDES; SILICON COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS

Optional Information

Notes
Published in summary form only.