Published November 4, 2002 | Version v1
Journal article Metadata-only

Control of magnetization reversal process with pinning layer in FePt thin films

Creators

  • 1. Department of Material Sciences, National University of Singapore, Singapore 119620 (Singapore)
  • 2. Data Storage Institute, 5 Engineering Drive 1, NUS, Singapore 117608 (Singapore)
  • 3. Electrical and Computer Engineering Department, National University of Singapore, Singapore 119620 (Singapore)

Description

The magnetization reversal processes of in situ ordered FePt thin films prepared by magnetron sputtering have been studied. A kind of nonmagnetic Ru pinning layer inserted in the FePt magnetic layer was described to introduce controllable pinning sites. The magnetization reversal mechanism of FePt thin films was observed to shift from the typical domain-wall motion behavior to the nucleation mode with Ru pinning layer inserted. Coercivity enhancement was also observed with relative thinner Ru pinning layer inserted in the FePt film

Additional details

Identifiers

DOI
10.1063/1.1518161;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
81
Journal Issue
19
Journal Page Range
p. 3612-3614
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35017777
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANISOTROPY; FERROMAGNETIC MATERIALS; IRON ALLOYS; MAGNETIC FIELD REVERSAL; MAGNETIC PROPERTIES; MAGNETIZATION; PLATINUM ALLOYS; RUTHENIUM; SPUTTERING; THIN FILMS
Descriptors DEC
ALLOYS; ELEMENTS; FILMS; MAGNETIC FIELD CONFIGURATIONS; MAGNETIC MATERIALS; MATERIALS; METALS; PHYSICAL PROPERTIES; PLATINUM METAL ALLOYS; PLATINUM METALS; REFRACTORY METALS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2002 American Institute of Physics.