Published September 2007 | Version v1
Miscellaneous Open

Magnetic-field-induced quantum paraelectric state in multiferroic BiMn2O5

  • 1. Rutgers univ., National high magnetic field laboratory, Los Alamos (United States)
  • 2. Department of physics and astronomy, Seoul national univ., Seoul (Korea, Republic of)

Description

Full text: Quantum paraelectric constitutes a unique material system that remains as a paraelectric state down to a proximate zero temperature without developing a long range order of electric dipoles predicted by mean-field interaction, due to large zero-phonon vibration amplitude (i.e. quantum mechanical fluctuation of ionic position). To realize the zero temperature paraelectric state from the neighboring ferro electricity, researchers have often used pressure or doping as a control parameter, as the responsible source of quantum fluctuation is in the lattice degree of freedom. Herein, we report a novel route to realize the first magnetic field-tuned quantum paraelectric state in a multiferroic compound BiMn2O5. (authors)

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Part of:
Abstracts of fifth international conference 'Magnetic and superconducting materials'

Additional details

Publishing Information

Publisher
Khorezm Mamun academy of sciences
Imprint Place
Khiva (Uzbekistan)
Imprint Title
Abstracts of fifth international conference 'Magnetic and superconducting materials'
Imprint Pagination
114 p.
Journal Page Range
p. 16
Report number
INIS-UZ--150

Conference

Title
5. international conference on Magnetic and superconducting materials
Dates
25-30 Sep 2007
Place
Khiva (Uzbekistan)

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
39121295
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL LATTICES; FERROELECTRIC MATERIALS; FLUCTUATIONS; MAGNETIC FIELDS; MANGANESE COMPOUNDS; QUANTUM ELECTRONICS; TEMPERATURE ZERO K
Descriptors DEC
CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; MATERIALS; TRANSITION ELEMENT COMPOUNDS; VARIATIONS

Optional Information

Notes
refs.