Published September 1988 | Version v1
Journal article Metadata-only

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

Creators

  • 1. Moskovskij Inst. Stali i Splavov (USSR)
  • 2. Gosudarstvennyj Nauchno-Issledovatel'skij i Proektnyj Inst. Redkometallicheskoj Promyshlennosti, Moscow (USSR)

Description

Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

Additional details

Additional titles

Subtitle (English)
2. Microdefects and dislocations
Original title (Russian)
Особенности дефектообразования в монокристаллах InP, легированных донорными (С, Ге) и акцепторной (Зн) примесями
Original subtitle (Russian)
2. Mikrodefekty i dislokatsii.

Publishing Information

Journal Title
Kristallografiya
Journal Volume
33
Journal Issue
5
Series
Kristallografiya.
Journal Page Range
1219-1226
ISSN
0023-4761
CODEN
KRISA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20021930
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DISLOCATIONS; DOPED MATERIALS; GERMANIUM ADDITIONS; INDIUM PHOSPHIDES; MICROSTRUCTURE; MONOCRYSTALS; QUANTITY RATIO
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; INDIUM COMPOUNDS; LINE DEFECTS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS