Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy

Solid source molecular beam epitaxy is used to explore the growth of carbon films directly on Si(111). It is shown that graphitic carbon is grown by the implementation of a thin amorphous carbon film that suppresses the formation of SiC precipitates. Raman scattering measurements show the D and G vibrational phonon modes, indicating graphitic ordering in the carbon film. X-ray photoelectron spectroscopy is used to verify the formation of sp2 bonds in the graphitic carbon films and confirms the suppression of SiC.