Published June 1998
| Version v1
Miscellaneous
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Ionization-induced damage increase in As-implanted GaAs
Creators
- 1. Institute of Nuclear Chemistry and Technology, Warsaw (Poland)
Description
no abstract available
Files
29054860.pdf
Files
(145.0 kB)
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Additional details
Publishing Information
- Imprint Title
- Annual Report of Institute of Nuclear Chemistry and Technology 1997
- Imprint Pagination
- 167 p.
- Journal Page Range
- p. 35-37
- ISSN
- 1425-204X
- Report number
- INIS-PL--98-007
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 29054860
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ARSENIC IONS; DOPED MATERIALS; ELASTIC SCATTERING; ELECTRON BEAMS; GALLIUM ARSENIDES; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; GALLIUM COMPOUNDS; IONS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PNICTIDES; RADIATION EFFECTS; SCATTERING
Optional Information
- Notes
- 11 refs, 3 figs