Radiation resistance of the RAM bipolar highly integrated circuits to the ionizing radiation pulse effect

Theoretical models of the resistance of the RAM bipolar highly integrated circuits (HIC) to ionizing radiation pulse action are considered. The models reflect the dependences of radiation resistance indices in modes of designation, storage and reading on the design-technological features, operation and circuit parameters. In particular, it is shown that improving the time and design parameters of designation amplifiers is not reasonable for the RAM HIC with great storage capacity. It is noted that storage matrix sectioning of the RAM HIC applied in practice is one of ways for increasing the matrix radiation resistance