Published April 16, 1983
| Version v1
Journal article
Effect of laser irradiation on the electrical properties of polycrystalline thin films of tellurium
- 1. Delhi Univ. (India). Dept. of Physics and Astrophysics
Description
Polycrystalline thin films of tellurium have been irradiated with a pulsed Q-switched ruby laser. Electric conductivity and Hall effect studies indicated that the irradiated films have lower values of free carrier concentration and higher values of Hall mobility. Variations of the Hall coefficient and the Hall mobility with temperature are shown and interpreted
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 76
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K137-K140
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14786520
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARRIER DENSITY; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; FILMS; GRAIN BOUNDARIES; GRAIN SIZE; HALL EFFECT; LASER RADIATION; PHYSICAL RADIATION EFFECTS; POLYCRYSTALS; PULSED IRRADIATION; TELLURIUM; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; IRRADIATION; MICROSTRUCTURE; MOBILITY; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; SIZE
Optional Information
- Notes
- Short note.