Published 2002 | Version v1
Miscellaneous Metadata-only

Photoelectrical phenomena in n+-p-junctions based on HgCdTe

Creators

  • 1. Pedagogical University of Experimental Physics, Drohobych (Ukraine)
  • 2. Rzeszow University, Institute of Physics, Rzeszow (Poland)

Description

no abstract available

Part of:
Abstracts of International Conference on Solid State Crystals - Materials Science and Applications

Additional details

Publishing Information

Imprint Title
Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
Imprint Pagination
210 p.
Journal Page Range
p. 181

Conference

Title
International Conference on Solid State Crystals - Materials Science and Applications
Dates
14-18 Oct 2002
Place
Zakopane (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
34075370
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CADMIUM COMPOUNDS; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; IMPURITIES; INFRARED RADIATION; MERCURY COMPOUNDS; P-N JUNCTIONS; PHOTODIODES; PHOTOELECTRIC EFFECT; RECOMBINATION; RELAXATION TIME; SOLID SOLUTIONS; TELLURIDES
Descriptors DEC
CHALCOGENIDES; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; HOMOGENEOUS MIXTURES; MIXTURES; MOBILITY; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SOLUTIONS; TELLURIUM COMPOUNDS

Optional Information