Published March 28, 2000 | Version v1
Patent

Method for surface passivation and protection of cadmium zinc telluride crystals

Creators

Description

A method for reducing the leakage current in CZT crystals, particularly Cd1-xZnxTe crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd0.9Zn0.1Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state

Availability note (English)

Available from Patent and Trademark Office, Box 9, Washington, DC 20232 (US)

Additional details

Publishing Information

Imprint Pagination
[10 p.]
IPC:
Int. Cl. C23F 1/00
IPC
Int. Cl. C23F 1/00
Patent number
US patent document 9-118,691

Optional Information

Secondary number(s)
US patent application 9-118,691