Published March 28, 2000
| Version v1
Patent
Method for surface passivation and protection of cadmium zinc telluride crystals
Creators
Description
A method for reducing the leakage current in CZT crystals, particularly Cd1-xZnxTe crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd0.9Zn0.1Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state
Availability note (English)
Available from Patent and Trademark Office, Box 9, Washington, DC 20232 (US)Additional details
Publishing Information
- Imprint Pagination
- [10 p.]
- IPC:
- Int. Cl. C23F 1/00
- IPC
- Int. Cl. C23F 1/00
- Patent number
- US patent document 9-118,691
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 31022420
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- CADMIUM TELLURIDES; LEAKAGE CURRENT; PASSIVATION; PROTECTIVE COATINGS; SEMICONDUCTOR DETECTORS; SILICON NITRIDES; SPECTROMETERS; ZINC TELLURIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COATINGS; CURRENTS; ELECTRIC CURRENTS; MEASURING INSTRUMENTS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATION DETECTORS; SILICON COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Secondary number(s)
- US patent application 9-118,691