Published February 2011 | Version v1
Journal article

A CMOS variable gain LNA for UWB receivers

  • 1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  • 2. Semiconductor Manufacturing International Corporation, Shanghai 201203 (China)

Description

A CMOS variable gain low noise amplifier (LNA) is presented for 4.2-4.8 GHz ultra-wideband application in accordance with Chinese standard. The design method for the wideband input matching is presented and the low noise performance of the LNA is illustrated. A three-bit digital programmable gain control circuit is exploited to achieve variable gain. The design was implemented in 0.13-μm RF CMOS process, and the die occupies an area of 0.9 mm2 with ESD pads. Totally the circuit draws 18 mA DC current from 1.2 V DC supply, the LNA exhibits minimum noise figure of 2.3 dB, S(1,1) less than -9 dB and S(2,2) less than -10 dB. The maximum and the minimum power gains are 28.5 dB and 16 dB respectively. The tuning step of the gain is about 4 dB with four steps in all. Also the input 1 dB compression point is -10 dBm and input third order intercept point (IIP3) is -2 dBm. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/32/2/025004

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
32
Journal Issue
2
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43013165
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
AMPLIFIERS; DESIGN; GAIN; GHZ RANGE; INTEGRATED CIRCUITS; NOISE; SEMICONDUCTOR MATERIALS
Descriptors DEC
AMPLIFICATION; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; MATERIALS; MICROELECTRONIC CIRCUITS