Lead(IV) dioxide: an effective electron injection material to realize high-efficiency inverted top-emitting organic light-emitting diodes
- 1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022, Peoples's Republic of China (China)
Description
Lead(IV) dioxide (PbO2) has been used as the electron injection layer (EIL) to realize high-efficiency inverted top-emitting organic light-emitting diodes (I-TOLEDs). It can be seen that the inserting of the PbO2 EIL significantly reduces operational voltage, thus greatly improving the current efficiency and power efficiency of fabricated I-TOLEDs. The 10-(2-benzothiazolyl)-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H, 11H-[1] benzopyrano [6, 7, 8-ij] quinolizin-11-one (C545T)-based I-TOLEDs with the PbO2 EIL exhibit a maximum current efficiency of 31.6 cd A−1 and a maximum power efficiency of 14.3 lm W−1, which are both higher than 22.5 cd A−1 and 5.4 lm W−1 of the I-TOLEDs with LiF as the EIL respectively. A detailed analysis with respect to the role mechanism of PbO2 in electron injection has been presented. The improvement in EL performance is attributed to the formation of the interfacial dipoles at the electrode interface due to charge transfer between PbO2 and Alq3
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/24/10/105027Additional details
Identifiers
- DOI
- 10.1088/0268-1242/24/10/105027;
- PII
- S0268-1242(09)12594-4;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 24
- Journal Issue
- 10
- Journal Page Range
- [4 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45010977
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIPOLES; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRON BEAM INJECTION; INTERFACES; LAYERS; LEAD; LEAD OXIDES; LIGHT EMITTING DIODES
- Descriptors DEC
- BEAM INJECTION; CHALCOGENIDES; ELEMENTS; LEAD COMPOUNDS; METALS; MULTIPOLES; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES