Published October 2009 | Version v1
Journal article

Lead(IV) dioxide: an effective electron injection material to realize high-efficiency inverted top-emitting organic light-emitting diodes

  • 1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022, Peoples's Republic of China (China)

Description

Lead(IV) dioxide (PbO2) has been used as the electron injection layer (EIL) to realize high-efficiency inverted top-emitting organic light-emitting diodes (I-TOLEDs). It can be seen that the inserting of the PbO2 EIL significantly reduces operational voltage, thus greatly improving the current efficiency and power efficiency of fabricated I-TOLEDs. The 10-(2-benzothiazolyl)-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H, 11H-[1] benzopyrano [6, 7, 8-ij] quinolizin-11-one (C545T)-based I-TOLEDs with the PbO2 EIL exhibit a maximum current efficiency of 31.6 cd A−1 and a maximum power efficiency of 14.3 lm W−1, which are both higher than 22.5 cd A−1 and 5.4 lm W−1 of the I-TOLEDs with LiF as the EIL respectively. A detailed analysis with respect to the role mechanism of PbO2 in electron injection has been presented. The improvement in EL performance is attributed to the formation of the interfacial dipoles at the electrode interface due to charge transfer between PbO2 and Alq3

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/24/10/105027

Additional details

Identifiers

DOI
10.1088/0268-1242/24/10/105027;
PII
S0268-1242(09)12594-4;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
24
Journal Issue
10
Journal Page Range
[4 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45010977
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DIPOLES; EFFICIENCY; ELECTRIC POTENTIAL; ELECTRON BEAM INJECTION; INTERFACES; LAYERS; LEAD; LEAD OXIDES; LIGHT EMITTING DIODES
Descriptors DEC
BEAM INJECTION; CHALCOGENIDES; ELEMENTS; LEAD COMPOUNDS; METALS; MULTIPOLES; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES