Published May 31, 2010
| Version v1
Journal article
Influence of electrodeposition potential and heat treatment on structural properties of CdTe films
- 1. Department of Information Management, Fortune Institute of Technology, 83160 Kaohsiung, Taiwan (China)
- 2. Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, 64002 Douliou, Yunlin, Taiwan (China)
- 3. Department of Electrical Engineering, National Sun Yat-Sen University, 80424 Kaohsiung, Taiwan (China)
Description
A modified Butler-Volmer model is developed to predict the potential of perfect stoichiometry (PPS) for electrodeposition. CdTe thin films are deposited in an acidic solution; their electrodeposition mechanism is investigated using cyclic voltammetry. Calculated and experimental PPS values exhibit good agreement. At PPS, well-connected granular CdTe thin films can be deposited; these are predicted to be intrinsic, and slightly p-type due to cadmium vacancies. Type conversion occurs only because of defect redistribution and local defect reactions after annealing; the converted n-type layer exhibits lower resistivity and higher mobility. A film annealed at 350 oC exhibits excellent crystallization.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2009.12.077Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2009.12.077;
- PII
- S0040-6090(09)02059-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 15
- Journal Page Range
- p. 4197-4202
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42054932
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CADMIUM TELLURIDES; CRYSTALLIZATION; ELECTRODEPOSITION; LAYERS; MOBILITY; SCANNING ELECTRON MICROSCOPY; SOLUTIONS; STOICHIOMETRY; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; VACANCIES; VOLTAMETRY; X-RAY DIFFRACTION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; DISPERSIONS; ELECTROLYSIS; ELECTRON MICROSCOPY; FILMS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; LYSIS; MICROSCOPY; MIXTURES; PHASE TRANSFORMATIONS; POINT DEFECTS; SCATTERING; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.