Published February 1985
| Version v1
Journal article
Effect of ion-plasma treatment on the surface potential of silicon
Description
The possibility of the silicon surface potential stabilization by ion-plasma treatment is investigated. It is shown that ion-plasma treatment results in a decrease of the surface potential so that inversion of conductivity in n-type silicon surface is observed. The treatment conditions permitting the stabilization of the surface potential are determined
Additional details
Additional titles
- Original title (Russian)
- Влияние ионно-плазменной обработки на поверхностный потенциал кремния
Publishing Information
- Journal Title
- Poverkhn.: Fiz., Khim., Mekh.
- Journal Issue
- no.2
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 17027451
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AGING; ARGON IONS; ELECTRIC CONDUCTIVITY; EPITAXY; FILMS; HALL EFFECT; KEV RANGE 01-10; NITROGEN IONS; OXYGEN IONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; SURFACE TREATMENTS; TIME DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MATERIALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS