Published December 1983
| Version v1
Journal article
Investigation of valence band structures in p-type Pbsub(1-x)Snsub(x)Te in the neighbourhood of phase transition
Description
Results of experimental investigation into the temperature dependence of band parameters, lattice permittivity and concentration of light and heavy holes in p-type Pbsub(1-x)Snsub(x)Te, using magnetoplasma waves, are presented. On the temperature curve of the lattice permittivity and band parameters at T0=20 K their values become extreme, which is related to the structural phase transition. The phase transition is shown to cause the band spectrum reconstruction accompanied by a reduction in the energy gap between the upper limits of valence bands of light and heavy holes, localized in the L- and Σ-points of a Brillouin zones, respectively, and by a change in the form of the constant energy surface of these holes
Additional details
Additional titles
- Original title (Russian)
- Исследование структуры валентных зон в Пбсуб(1-x)Снсуб(x)Те п-тыпе в окрестности фазового перехода
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 17
- Journal Issue
- 12
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2129-2132
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 16003943
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANALYTICAL SOLUTION; ANISOTROPY; BRILLOUIN ZONES; CHARGE DENSITY; COMPUTER CALCULATIONS; HOLES; LEAD TELLURIDES; MAGNETIC FIELDS; MICROWAVE RADIATION; MONOCRYSTALS; P-TYPE CONDUCTORS; PERMITTIVITY; PHASE TRANSFORMATIONS; TEMPERATURE DEPENDENCE; TIN TELLURIDES; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; CRYSTALS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; LEAD COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TIN COMPOUNDS; ZONES
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).