Published July 11, 2011 | Version v1
Journal article Metadata-only

Manganese-doped indium oxide and its application in organic light-emitting diodes

Creators

  • 1. Graduate School of Chinese Academy of Sciences, Beijing 100080 (China)
  • 2. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

Description

Thin films of manganese-doped indium oxide (IMO) deposited by electron beam evaporation have been investigated as anodes in organic light-emitting diodes (OLEDs). The IMO films have a high work function of 5.35 eV, a desirable surface morphology with an average roughness of 1.1 nm, a high average optical transmittance of 87.2% in the visible region, and a maximum optical transmittance of 92% at 460 nm. It is demonstrated that an IMO anode can effectively improve hole injection at the anode/organic interface, resulting in OLEDs with an increased electroluminescent efficiency.

Additional details

Identifiers

DOI
10.1063/1.3610559;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
99
Journal Issue
2
Journal Page Range
p. 023302-023302.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43115944
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANODES; DOPED MATERIALS; ELECTROLUMINESCENCE; ELECTRON BEAMS; EV RANGE; EVAPORATION; HOLES; INDIUM OXIDES; INTERFACES; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; MANGANESE; MORPHOLOGY; ORGANIC SEMICONDUCTORS; ROUGHNESS; SURFACES; THIN FILMS; VACUUM COATING; WORK FUNCTIONS
Descriptors DEC
BEAMS; CHALCOGENIDES; DEPOSITION; ELECTRODES; ELEMENTS; EMISSION; ENERGY RANGE; FILMS; FUNCTIONS; INDIUM COMPOUNDS; LEPTON BEAMS; LUMINESCENCE; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SURFACE COATING; SURFACE PROPERTIES; TRANSITION ELEMENTS; TRANSMISSION

Optional Information

Notes
(c) 2011 American Institute of Physics