Published 1993 | Version v1
Report Open

Disintegration of C60 by Xe ion irradiation

Creators

  • 1. Technion-Israel Inst. of Tech., Haifa (Israel). Solid State Inst.
  • 2. Melbourne Univ., Parkville, VIC (Australia). School of Physics
  • 3. Royal Melbourne Inst. of Tech., VIC (Australia)

Description

The Changes in resistivity of fullerene (C60) films subject to 320 keV Xe ion irradiation are investigated as a function of ion dose. From a comparison of this dependence with similar data on other Xe irradiated C containing insulating materials and with data on C implanted fused quartz, it is concluded that upon ion impact C60 clusters completely disintegrate. This disintegration releases about 60 C atoms which disperse amongst the remaining intact C60 spheres giving rise to hopping conductivity between isolated C atoms. 16 refs., 3 figs

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
13 p.
Report number
UM-P--93/26

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
24068491
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
CARBON; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; ION IMPLANTATION; KEV RANGE 100-1000; RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE
Descriptors DEC
DATA; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; INFORMATION; KEV RANGE; NONMETALS; NUMERICAL DATA; PHYSICAL PROPERTIES; SEMIMETALS