Published November 2018 | Version v1
Journal article

Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots

  • 1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
  • 2. Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude (Germany)

Description

A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap AlxIn1–xAs alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
52
Journal Issue
11
Journal Page Range
p. 1437-1441
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49100712
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
ARSENIC ALLOYS; BASES; EXCITONS; FINE STRUCTURE; GALLIUM ALLOYS; GALLIUM ARSENIDES; INDIUM ALLOYS; INDIUM ARSENIDES; QUANTUM CRYPTOGRAPHY; QUANTUM DOTS
Descriptors DEC
ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYPTOGRAPHY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES; QUASI PARTICLES

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Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.