Published November 2018
| Version v1
Journal article
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots
Creators
- 1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
- 2. Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude (Germany)
Description
A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap AlxIn1–xAs alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 52
- Journal Issue
- 11
- Journal Page Range
- p. 1437-1441
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49100712
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARSENIC ALLOYS; BASES; EXCITONS; FINE STRUCTURE; GALLIUM ALLOYS; GALLIUM ARSENIDES; INDIUM ALLOYS; INDIUM ARSENIDES; QUANTUM CRYPTOGRAPHY; QUANTUM DOTS
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYPTOGRAPHY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES; QUASI PARTICLES
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.