Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate

The electron temperature (T _e) in AlGaN/GaN high electron mobility transistors (HEMTs) on Si was studied by spectroscopic measurements of its electroluminescence (EL). The EL spectrum has been followed by the Maxwell–Boltzmann distribution and no signal at equivalent energy as a band-gap of GaN has been observed. These experimental results imply that the EL is dominated by an intra-band transition. The highest T _e of 8600 K in AlGaN/GaN HEMTs was extracted at the drain voltage of 60 V. The experimental results are in agreement with results previously predicted by a Monte Carlo simulation. (paper)