Published February 15, 2015 | Version v1
Journal article

Enhanced figure of merit in antimony telluride thermoelectric materials by In–Ag co-alloying for mid-temperature power generation

  • 1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
  • 2. Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Zhejiang University, Hangzhou 310027 (China)

Description

V–VI compounds have been widely investigated as promising thermoelectric materials for room temperature refrigeration. In this paper, we report a systematic study of high performance p-type antimony–telluride-based thermoelectric alloys for mid-temperature power generation. Indium alloying is adopted as an effective approach to widen the band gap and suppress the detrimental bipolar conduction at elevated temperatures. The low Seebeck coefficient of binary antimony telluride, arising from high hole concentration generated by antisite defects, was enhanced by raising the antisite defect energy formation. Meanwhile, the induced alloying scattering significantly reduced the lattice thermal conductivity. Ag acceptor doping was used to further suppress the detrimental bipolar conduction and improve the figure of merit, zT. These combined effects resulted in a peak zT of ∼0.92 at 710 K for the hot-pressed Ag0.01Sb1.85In0.15Te3 alloy, whereas the average zTav of 0.8 was obtained in the temperature range of 500–710 K, indicating a great potential of the alloy for application in mid-temperature thermoelectric power generation

Availability note (English)

Available from http://dx.doi.org/10.1016/j.actamat.2014.11.023

Additional details

Identifiers

DOI
10.1016/j.actamat.2014.11.023;
PII
S1359-6454(14)00876-3;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
85
Journal Page Range
p. 270-278
ISSN
1359-6454
CODEN
ACMAFD

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.