Published February 1974
| Version v1
Journal article
Diffusion of tellurium in GaAs
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Диффузия теллура в GaAs
Publishing Information
- Journal Title
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Volume
- 10
- Journal Issue
- 2
- Series
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Page Range
- 228-230
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5129558
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ARSENIDES; DIFFUSION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; KINETICS; MIGRATION LENGTH; TELLURIUM; TEMPERATURE DEPENDENCE; VERY HIGH TEMPERATURE
- Descriptors DEC
- ARSENIC COMPOUNDS; ELEMENTS; SEMIMETALS
Optional Information
- Notes
- For English translation see the journal Inorg. Mater.