Published April 1993
| Version v1
Journal article
Characteristics of impurity-doped GaSe radiation detectors
- 1. Toyama Univ. (Japan). Faculty of Engineering
Description
The properties of GaSe radiation detectors doped with Si, Ge and Sn were investigated. It was found that doping with these impurities substantially decreased the leakage current and that most detectors doped with the impurities at about 0.005 to 0.1 at.% showed fairly good energy resolutions from 4 to 15 % for 241Am 5.5 MeV alpha particles, while most pure GaSe detectors did not function because of their excessively large leakage current. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers and Short Notes
- Journal Volume
- 32
- Journal Issue
- 4
- Journal Page Range
- p. 1857-1858.
- ISSN
- 0021-4922
- CODEN
- JAPNDE
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 25011124
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALPHA PARTICLES; CRYSTAL DOPING; ENERGY RESOLUTION; GADOLINIUM SELENIDES; IMPURITIES; LEAKAGE CURRENT; MEV RANGE 01-10; PERFORMANCE TESTING; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ENERGY RANGE; GADOLINIUM COMPOUNDS; HELIUM IONS; IONIZING RADIATIONS; IONS; MEASURING INSTRUMENTS; MEV RANGE; RADIATION DETECTORS; RADIATIONS; RARE EARTH COMPOUNDS; RESOLUTION; SELENIDES; SELENIUM COMPOUNDS; TESTING