Electron device used under irradiation of radiation and method of using the same

The present invention provides a method of extending a life span of an electronic device used under a radiation circumstance at high dose rate such as a nuclear power plant. Namely, a means for heating semiconductor parts constituting the electron device is disposed. The heating means preferably has a function to heat and keep the semiconductor parts at the highest working temperature. More preferably, the heating means is adapted to heat and keep the semiconductor parts at the highest working temperature during operation of the parts, and also adapted to heat and keep them at an upper limit temperature when they are not in operation. Then, the heating means heats the semiconductor parts thereby suppressing accumulation of positive charges into a silicon oxide membranes and increase of a boundary level generated at the boundary between the silicon oxide membrane and silicon, which are main causes of degradation of the characteristic of the semiconductor parts due to irradiation of radiation. As a result, the life span of the electronic device used under radiation circumstance can be extended. (I.S.)