Published October 31, 1970
| Version v1
Report
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Silicon-controlled rectifiers with improved radiation resistance. Final report
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 98 p.
- Report number
- N--71-22365
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 5115577
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- NEUTRONS; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR RECTIFIERS; SILICON
- Descriptors DEC
- BARYONS; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; HARDENING; NUCLEONS; RADIATION EFFECTS; RECTIFIERS; SEMICONDUCTOR DEVICES; SEMIMETALS
Optional Information
- Secondary number(s)
- NASA-CR--72842.