Published January 1982
| Version v1
Journal article
Electron mobility analysis of n-Si inversion layers
Creators
- 1. Innsbruck Univ. (Austria). Inst. fuer Experimentalphysik
Description
The electron mobilities in (100), (110) and (111) n-channel Si MOSFETs with the same substrate doping are investigated and parameters concerning the oxide charge, acoustic phonon and surface roughness scattering are determined. It was found that there exists a correlation between the oxide charge density and the surface roughness parameter L. (orig.)
Additional details
Publishing Information
- Journal Title
- Surf. Sci.
- Journal Volume
- 113
- Journal Issue
- 1-3
- Series
- Surf. Sci.
- Journal Page Range
- 223-227
- ISSN
- 0039-6028
Conference
- Title
- 4. International conference on electronic properties of two-dimensional systems.
- Dates
- 24 - 28 Aug 1981.
- Place
- New London, NH, USA.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 13681672
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- CHARGE DENSITY; ELECTRON DENSITY; ELECTRON MOBILITY; EXPERIMENTAL DATA; LAYERS; MOSFET; OXIDES; ROUGHNESS; SCATTERING; SILICON; SURFACE PROPERTIES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; DATA; ELEMENTS; INFORMATION; MOBILITY; MOS TRANSISTORS; NUMERICAL DATA; OXYGEN COMPOUNDS; PARTICLE MOBILITY; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS